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About the company
In today’s push for electrification and reduction of CO2 emissions, the demand for more efficient technologies is paramount. Research indicates that global electricity consumption could decrease by up to 30 % with the adoption of next-generation silicon carbide semiconductor devices.
While the electric car industry is leading the charge in this transformation, many other high-voltage industries are poised to follow suit. However, the electrification process is still in its early stages and far from optimized.
At TekSiC, we’re committed to driving this transition forward by providing cutting-edge systems and processes for silicon carbide semiconductor fabrication. These enable the development of next-generation power electronics for higher voltages, delivering increased efficiency and significantly reducing the climate footprint across various industries.
our history
TekSiC was established in 2021, in one of the global epicenters for Silicon Carbide crystal growth, Linköping Sweden.
Our first product, a Sublimation vacuum furnace used e.g. for SiC Crystal growth is now CE marked and industrialized and several tools has been delivered and installed.
An experienced team
The TekSiC Team has over 60 years of experience in designing and running SiC crystal growth systems (PVT and HTCVD). Additionally, we have over 40 years of experience in designing and running epitaxial tools for wide bandgap semiconductors such as SiC, GaN, and Ga2O3.
Continuous development
The Team thrives when faced with engineering challenges, resulting in new and innovative solutions. To meet the demands of the future, we continuously develop our products and invent new semiconductor growth systems.
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